公开(公告)号：US20240292601A1

公开(公告)日：2024-08-29

申请号：US18460522

申请日：2023-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGJUN LEE ,  Keunnam Kim ,  Kiseok Lee

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/05 ,  H10B12/485

Abstract: A semiconductor device includes a substrate including an active region, a word line and a bit line that overlap the active region while crossing the active region, a bit line capping layer that is disposed on the bit line, a direct contact that connects the active region and the bit line, and a buried contact that is connected to the active region. Opposite sides of the bit line capping layer have asymmetric shapes.