公开(公告)号：US20240047501A1

公开(公告)日：2024-02-08

申请号：US18345429

申请日：2023-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUNSUB SHIM ,  WONSEOK LEE ,  HAEWOOK JEONG

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor includes a first substrate layer, a second substrate layer that is thicker than the first substrate layer, an inter-substrate insulating layer arranged between the first substrate layer and the second substrate layer, a first impurity region, a pair of second impurity regions, and a third impurity region, which are spaced apart from each other and arranged on some portions of the first substrate layer. The image sensor further includes a photodiode region constituting a photo sensing device arranged on the second substrate layer, a transfer transistor including a first gate electrode layer that fills a gate hole, penetrates the first substrate layer and the inter-substrate insulating layer, and extends to the second substrate layer, and a floating diffusion region arranged on a side of the first substrate layer and connected to the transfer transistor.