公开(公告)号：US20150286078A1

公开(公告)日：2015-10-08

申请号：US14492733

申请日：2014-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongchul CHO ,  Yongtak LEE ,  Byunghoon NA ,  Changyoung PARK ,  Gunwu JU ,  Yonghwa PARK

IPC: G02F1/017

CPC classification number: G02F1/01725 ,  B82Y20/00 ,  G02F1/133605 ,  G02F2001/0157 ,  G02F2001/01733 ,  G02F2001/0175 ,  G02F2001/01766 ,  H01L23/528 ,  H01L23/53223 ,  H01L31/00 ,  H01L31/035236 ,  H01L31/075 ,  H01L31/105 ,  H01L33/04 ,  H01L33/10 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/05124 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/12042 ,  Y02E10/548 ,  Y10S977/755

Abstract: An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

Abstract translation: 光学装置包括有源层，其包括至少两个外部屏障和至少一个耦合的量子阱，其插入在所述至少两个外部屏障之间。 每个耦合量子阱包括分别设置在至少三个量子阱层之间的至少三个量子阱层和至少两个耦合势垒。 设置在至少三个量子阱层的相对端部的两个量子阱层的厚度小于设置在设置在相对端部的两个量子阱层之间的另一个量子阱层的厚度。 设置在相对端部的两个量子阱层的带隙可以高于设置在两个量子阱层之间的另一个量子阱层的带隙。