公开(公告)号：US20240397707A1

公开(公告)日：2024-11-28

申请号：US18381785

申请日：2023-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangkyu SUN ,  Goro CHOI ,  Hyo-Sub KIM ,  Junhyeok AHN ,  Eunkyung CHA ,  Dongmin CHOI ,  Sanghyun CHOI

IPC: H10B12/00 ,  H01L29/423

Abstract: A semiconductor memory device includes a substrate having a cell array area and a core area near the cell array area, the cell array area including a direct contact hole exposing an active region, a buried contact in the cell array area, the buried contact being connected to a storage element, a direct contact in the cell array area, the direct contact including an upper layer and a lower layer, the upper layer including a metal, and the lower layer being in the direct contact hole in direct contact with the active region and including a silicide of the metal, bit lines in contact with the upper layer of the direct contact, and word lines crossing the bit lines.