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    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20160372636A1

    公开(公告)日：2016-12-22

    申请号：US15171087

    申请日：2016-06-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung Wook HWANG ,  Si Han KIM ,  Wan Tae LIM ,  Eun Joo SHIN

    IPC: H01L33/46 ,  H01L33/32 ,  H01L33/58 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/06 ,  H01L33/22

    CPC classification number: H01L33/46 ,  H01L33/22 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

    Abstract: A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a wavelength conversion layer disposed on the light-emitting stack and configured to convert at least some of light having a first wavelength, emitted from the active layer, into light having a second wavelength, and a light control layer disposed between the light-emitting stack and the wavelength conversion layer, and including a first insulating layer and a second insulating layer, the first insulating layer having a refractive index lower than a refractive index of the light-emitting stack, and the second insulating layer having a refractive index higher than a refractive index of the first insulating layer by 0.5 or more.

    Abstract translation: 一种半导体发光器件包括：发光层，包括第一导电型半导体层，第二导电型半导体层和设置在第一导电型半导体层和第二导电类型半导体层之间的有源层 设置在所述发光叠层上并被配置为将从所述有源层发射的具有第一波长的至少一些光转换为具有第二波长的光的波长转换层，以及设置在所述发光层之间的光控制层 并且包括第一绝缘层和第二绝缘层，所述第一绝缘层的折射率低于所述发光叠层的折射率，所述第二绝缘层的折射率高于 第一绝缘层的折射率为0.5以上。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20160351764A1

    公开(公告)日：2016-12-01

    申请号：US15163204

    申请日：2016-05-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam Goo CHA ,  Wan Tae LIM ,  Yong Il KIM ,  Hye Seok NOH ,  Eun Joo SHIN ,  Sung Hyun SIM ,  Hanul YOO

    IPC: H01L33/58 ,  H01L33/24 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/50 ,  H01L33/44

    CPC classification number: H01L33/58 ,  F21K9/237 ,  F21K9/275 ,  F21S8/026 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L2224/11

    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

    Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。

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