公开(公告)号：US10346240B2

公开(公告)日：2019-07-09

申请号：US15095245

申请日：2016-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Hee Han ,  Yo-Seop Lim ,  Dong-Kwan Han

IPC: G06F11/07

Abstract: A repair information providing device in an integrated circuit including a plurality of memory blocks includes a plurality of faulty cell address registers connected to the memory blocks, respectively, a repair information storage block configured to store repair information including an address of a faulty cell and a memory index indicating a memory block having the faulty cell, a repair information control block configured to read the repair information from the repair information storage block, transfer the address of the faulty cell included in the repair information to the respective faulty cell address registers, and generate a memory block selection signal based on the memory index included in the repair information, and a clock gating block configured to receive a clock signal, and selectively transfer the clock signal to one of the faulty cell address registers connected to the memory block having the faulty cell in response to receiving the memory block selection signal.