公开(公告)号：US20230275183A1

公开(公告)日：2023-08-31

申请号：US18114785

申请日：2023-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： JAIWON JEAN ,  Namsung KIM ,  Yuri SOHN ,  Daemyung CHUN

IPC: H01L33/20 ,  H01L25/075

CPC classification number: H01L33/20 ,  H01L25/0756

Abstract: A light emitting device is provided. The light emitting device includes: a first semiconductor layer; a dislocation blocking layer on an upper surface of the first semiconductor layer and having a plurality of holes formed therein; a second semiconductor layer on the dislocation blocking layer; a third semiconductor layer on the second semiconductor layer; an active layer on the third semiconductor layer; and a fourth semiconductor layer on the active layer. A plurality of voids, which respectively overlap the plurality of holes along a vertical direction perpendicular to the upper surface of the first semiconductor layer, are provided between the first semiconductor layer and the second semiconductor layer.

公开(公告)号：US20230030530A1

公开(公告)日：2023-02-02

申请号：US17964957

申请日：2022-10-13

Applicant: SAMSUNG ELECTRONICS Co., LTD.

Inventor： Jaiwon JEAN ,  Joongseo KANG ,  Namsung KIM ,  Daemyung CHUN

IPC: H01L33/12 ,  H01L33/22 ,  H01L27/15 ,  H01L33/32

Abstract: A semiconductor light-emitting device includes a buffer structure, a first-type semiconductor layer on the buffer structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. The buffer structure includes a nucleation layer, a first dislocation-removing structure on the nucleation layer, and a buffer layer on the first dislocation-removing structure. The first dislocation-removing structure includes a first material layer on the nucleation layer and a second material layer on the first material layer. The second material layer has a lattice constant different from a lattice constant of the first material layer. A roughness of a top surface of the first material layer is higher than a roughness of a top surface of the nucleation layer and higher than a roughness of a top surface of the second material layer.

公开(公告)号：US20220085257A1

公开(公告)日：2022-03-17

申请号：US17323042

申请日：2021-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiwon PARK ,  Namsung KIM ,  Youngsub SHIN ,  Jonghyun LEE ,  Daemyung CHUN ,  Byungchul CHOI

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/38 ,  H01L33/46

Abstract: A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.