公开(公告)号：US20220190132A1

公开(公告)日：2022-06-16

申请号：US17406162

申请日：2021-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DOOSAN BACK ,  DONGOH KIM ,  GYUHYUN KIL ,  JUNG-HOON HAN

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/417

Abstract: A semiconductor device includes a gate stack including a gate insulating layer and a gate electrode on the gate insulating layer. The gate insulating layer includes a first dielectric layer and a second dielectric layer on the first dielectric layer, and a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer. The semiconductor device also includes a first spacer on a side surface of the gate stack, and a second spacer on the first spacer, wherein the second spacer includes a protruding portion extending from a level lower than a lower surface of the first spacer towards the first dielectric layer, and a dielectric constant of the second spacer is greater than the dielectric constant of the first dielectric layer and less than a dielectric constant of the first spacer.

公开(公告)号：US20230090769A1

公开(公告)日：2023-03-23

申请号：US18074125

申请日：2022-12-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DOOSAN BACK ,  DONGOH KIM ,  GYUHYUN KIL ,  JUNG-HOON HAN

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/51

Abstract: A semiconductor device includes a gate stack including a gate insulating layer and a gate electrode on the gate insulating layer. The gate insulating layer includes a first dielectric layer and a second dielectric layer on the first dielectric layer, and a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer. The semiconductor device also includes a first spacer on a side surface of the gate stack, and a second spacer on the first spacer, wherein the second spacer includes a protruding portion extending from a level lower than a lower surface of the first spacer towards the first dielectric layer, and a dielectric constant of the second spacer is greater than the dielectric constant of the first dielectric layer and less than a dielectric constant of the first spacer.