公开(公告)号：US20240304663A1

公开(公告)日：2024-09-12

申请号：US18417150

申请日：2024-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chunhum CHO ,  Sunmin MOON ,  Dongkwan BAEK ,  Jaewan CHANG

IPC: H01G4/33 ,  H10B12/00

CPC classification number: H01L28/91 ,  H10B12/033

Abstract: The capacitor structure includes a lower electrode on a substrate; a support layer on a sidewall of the lower electrode, the support layer including an insulating material; an interface structure having a first interface pattern on the sidewall of the lower electrode, the first interface pattern including a first metal, and a second interface pattern including a first portion on an outer sidewall of the first interface pattern and a second portion on a surface of the support layer, the second interface pattern including an oxide of a second metal, a dielectric pattern on the interface structure; and an upper electrode on the dielectric pattern, wherein the second portion of the second interface pattern further includes the first metal.