公开(公告)号：US20240324219A1

公开(公告)日：2024-09-26

申请号：US18604844

申请日：2024-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choasub KIM ,  Chungjin KIM ,  Youngho KWON ,  Jungho LEE

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: An integrated circuit device comprising: a substrate; a stack structure comprising interlayer insulating layers and gate electrodes; and a channel structure in the stack structure, wherein the gate electrodes comprise a first upper gate electrode at a highest position and a second upper gate electrode at a second-highest position, the interlayer insulating layers comprises a first interlayer insulating layer between the first upper gate electrode and the second upper gate electrode with a first thickness, a second interlayer insulating layer that has a second thickness, a lower surface of the first upper gate electrode is at a farther distance than or at an equal distance to a lower surface of the pad structure from the substrate, and an upper surface of the second upper gate electrode is at a closer distance than or at an equal distance to the lower surface of the pad structure from the substrate.