公开(公告)号：US20250081851A1

公开(公告)日：2025-03-06

申请号：US18531187

申请日：2023-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Choong Ho RHEE ,  Jae Chul PARK ,  Byong Gwon SONG ,  Jang Woo YOU ,  Yong Seop YOON ,  Du Hyun LEE

IPC: H10N19/00

Abstract: A thermal image sensor and a method of manufacturing the same. The thermal image sensor includes: a substrate; a row electrode and a column electrode on the substrate; a multi-layer stack including an absorption layer and a temperature sensor; supporting arms that extend from diagonal corners of the multi-layer stack and that are spaced apart from both sides of the multi-layer stack, wherein the supporting arms have a concave-convex shape including a plurality of concave portions and a plurality of convex portions; and legs protruding from the row electrode and the column electrode, wherein the legs are connected to extended ends of the supporting arms to allow the multi-layer stack to float above the substrate.