公开(公告)号：US11923317B2

公开(公告)日：2024-03-05

申请号：US17230416

申请日：2021-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjoon Yoon ,  Sunme Lim ,  Kyeong-Yeol Kwak ,  Soojung Kim

IPC: H01L21/66 ,  G03F7/00 ,  H01L23/528 ,  H01L23/544

CPC classification number: H01L23/544 ,  G03F7/70483 ,  H01L22/32 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a substrate, a first lower pattern group on the substrate and including a first key pattern and first lower test patterns horizontally spaced apart from the first key pattern, and a first upper pattern group on the first lower pattern group and including first pads horizontally spaced apart from each other and first upper test patterns between adjacent ones of the first pads. The first key pattern is configured to be used for a photography process associated with fabrication of the semiconductor device. The first pads are electrically connected to the first upper test patterns. One of the first pads vertically overlaps with the first key pattern.