公开(公告)号：US11840760B2

公开(公告)日：2023-12-12

申请号：US16207967

申请日：2018-12-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin-Jae Kang ,  Dong-Hoon Han ,  Do-Hyung Kim ,  Kyung-Wook Park ,  Kevin Bae ,  Sun-Soo Lee ,  In-Jae Lee ,  Jeon-Il Lee ,  Chae-Mook Lim

IPC: C23C16/455 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34

CPC classification number: C23C16/45544 ,  C23C16/34 ,  C23C16/45561 ,  H01L21/28562 ,  H01L21/76843

Abstract: In a layer deposition method, a substrate is loaded into a process chamber. A gas filling tank is charged with a gas to a predetermined charge pressure. The pressure of the gas is elevated to a pressure greater than the predetermined charge pressure. The gas is introduced into the process chamber.