公开(公告)号：US20230328951A1

公开(公告)日：2023-10-12

申请号：US18097675

申请日：2023-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-SIK PARK ,  SOOHO SHIN ,  CHEOLHO BAEK

IPC: H10B12/00

CPC classification number: H10B12/033 ,  H10B12/50 ,  H10B12/315

Abstract: A semiconductor device may include a substrate including a cell array region, a data storage structure provided on the cell array region of the substrate, the data storage structure including a bottom electrode, a top electrode on the bottom electrode, and a dielectric layer interposed between the bottom electrode and the top electrode, a blocking layer provided on a top surface of the top electrode, a lower interlayer insulating layer provided on the blocking layer, and a lower contact penetrating the lower interlayer insulating layer and electrically connected to the top electrode. At least a portion of a side surface of the lower contact may contact the blocking layer.