公开(公告)号：US20220020803A1

公开(公告)日：2022-01-20

申请号：US17190796

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Seok KIM ,  Byung Jun PARK ,  Byoung Ho KIM ,  Hee Geun JEONG

IPC: H01L27/146

Abstract: A semiconductor device including: a first substrate including a first surface and a second surface; a first inter-wiring insulating film on the first substrate; a first wiring in the first inter-wiring insulating film; a landing via in the first inter-wiring insulating film, and spaced apart from the first wiring; a second substrate including a third surface and a fourth surface; a second inter-wiring insulating film on the second substrate; a second wiring in the second inter-wiring insulating film; and a through via structure penetrating the second substrate and the second inter-wiring insulating film, and electrically connecting the second wiring to the landing via, wherein with respect to the second surface of the first substrate, a top surface of the landing via is higher than a bottom surface of the first wiring, and a bottom surface of the landing via is lower than the bottom surface of the first wiring.