公开(公告)号：US20180096840A1

公开(公告)日：2018-04-05

申请号：US15490976

申请日：2017-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Chul JEONG ,  Tae Kyu LEE ,  Sung Sik PARK ,  Joon Soo PARK ,  Kwang Sub YOON ,  Boo Hyun HAM

IPC: H01L21/027 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  G03F7/32 ,  G03F7/09 ,  G03F7/095

CPC classification number: H01L21/0276 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/427 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823431

Abstract: A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.

公开(公告)号：US20170148643A1

公开(公告)日：2017-05-25

申请号：US15355360

申请日：2016-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Boo Hyun HAM ,  Hyun Jae KANG ,  Sung Sik PARK ,  Yong Kug BAE ,  Kwang Sub YOON ,  Bum Joon YOUN ,  Hyun Chang LEE

IPC: H01L21/311 ,  H01L23/544 ,  H01L21/033 ,  H01L21/027

Abstract: A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.