公开(公告)号：US20160314983A1

公开(公告)日：2016-10-27

申请号：US14693668

申请日：2015-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Shoo HAN ,  Dong-Kwon KIM ,  Bong-Cheol KIM ,  Kang-ILL SEO

IPC: H01L21/308 ,  H01L21/8234

CPC classification number: H01L21/3086 ,  H01L21/3081 ,  H01L21/823431 ,  H01L29/66795

Abstract: A method of forming patterns of a semiconductor device includes sequentially forming first to third mask layers on a substrate including a first region and a second region, etching the third mask layer formed in the first region to form first mask elements of a first mask pattern, etching the third mask layer formed in the second region to form second mask elements of a second mask pattern, forming a first spacer film covering the second mask elements, forming a second spacer film on the first spacer film to fully fill at least one trench between the second mask elements and on the first mask elements, removing portions of the first and second spacer films to expose the upper surfaces of the first and second mask elements, etching the second mask layer, etching the first mask layer, and etching the substrate.

Abstract translation: 一种形成半导体器件的图案的方法包括在包括第一区域和第二区域的衬底上依次形成第一至第三掩模层，蚀刻形成在第一区域中的第三掩模层以形成第一掩模图案的第一掩模元件， 蚀刻在第二区域中形成的第三掩模层以形成第二掩模图案的第二掩模元件，形成覆盖第二掩模元件的第一间隔膜，在第一间隔膜上形成第二间隔膜，以完全填充至少一个沟槽， 第二掩模元件和第一掩模元件，去除第一和第二间隔膜的部分以暴露第一和第二掩模元件的上表面，蚀刻第二掩模层，蚀刻第一掩模层，以及蚀刻衬底。