公开(公告)号：US20220085245A1

公开(公告)日：2022-03-17

申请号：US17308345

申请日：2021-05-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun KIM ,  Yongmin KIM ,  Sungwon KO ,  Bokyoung KIM ,  Jinhwan KIM ,  Wongoo HUR

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a first electrode layer, a light emitting structure on the first electrode layer, a transparent electrode layer between the first electrode layer and the light emitting structure, an interlayer insulating layer between the transparent electrode layer and the first electrode layer, and having first and second openings, a second electrode layer between the first electrode layer and the interlayer insulating layer, and connected to the transparent electrode layer, and an electrode pad contacting the second electrode layer, each of the first openings and at least one of the second openings define one group to have at least first and second groups, the first group being closer to the electrode pad than the second group is, and a distance between the first and second openings in the first group being greater than a distance between the first and second openings in the second group.

公开(公告)号：US20250147690A1

公开(公告)日：2025-05-08

申请号：US18743963

申请日：2024-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-suk MOON ,  Bokyoung KIM ,  Hee Hyun NAM ,  Jinwoo SONG ,  Hyewon JEONG

IPC: G06F3/06

Abstract: An operating method of a storage device includes fetching, from an external host device, write command and write data, based on a 0-th fetch rate, storing the write data in a write cache region of a buffer memory device of the storage device, performing write cache processing with respect to the write cache region, based on a 0-th cache processing rate, the performing write cache processing including storing, in a nonvolatile memory device of the storage device, the write data of the write cache region, detecting a write cache level of the write cache region, and controlling the 0-th cache processing rate, based on the write cache level.