公开(公告)号：US10453707B2

公开(公告)日：2019-10-22

申请号：US15791795

申请日：2017-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Cho ,  Hyung Joon Kim ,  Jung Ho Kim ,  Joong Yun Ra ,  Bi O Kim ,  Jae Young Ahn ,  Ki Yong Oh ,  Sung Hae Lee

IPC: H01L21/00 ,  H01L21/56 ,  H01L21/8239 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/28 ,  H01L27/108 ,  H01L27/11582

Abstract: A method for fabricating a semiconductor device, the method including forming a mold structure on a substrate such that the mold structure includes alternately and repeatedly stacked interlayer insulating films and sacrificial films; forming a channel hole passing through the mold structure; forming a vertical channel structure within the channel hole; exposing a surface of the interlayer insulating films by removing the sacrificial films; forming an aluminum oxide film along a surface of the interlayer insulating films; forming a continuous film on the aluminum oxide film; and nitriding the continuous film to form a TiN film.