公开(公告)号：US09322640B2

公开(公告)日：2016-04-26

申请号：US13961305

申请日：2013-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sergey Nikolaevich Koptyaev ,  Maxim Vladimirovich Ryabko ,  Alexander Vyacheslavovich Shcherbakov ,  Alexey Dmitrievich Lantsov

IPC: G01B11/02

CPC classification number: G01B11/02 ,  G01B2210/56

Abstract: Optical measuring systems for measuring geometrical parameters of nano-objects and methods of measuring a critical size (CS) are provided. The optical method of measuring the CS includes selecting parameters of an optic scheme and an illumination condition; recording a set of nanostructure images corresponding to various wavelengths with various defocusing levels of scattered radiation; calculating a plurality of sets of images of a nanostructure with various defocusing levels, corresponding to various wavelengths of the scattered radiation with CS values within a known range; and comparing a set of measured images of the nanostructure with the sets of the calculated images and determining a best approximate value of the CS values.

Abstract translation: 提供了用于测量纳米物体几何参数的光学测量系统和测量临界尺寸（CS）的方法。 测量CS的光学方法包括选择光学方案的参数和照明条件; 记录对应于各种波长的一组纳米结构图像，其具有各种散焦辐射的散焦水平; 计算具有各种散焦水平的纳米结构的多组图像，对应于具有CS值在已知范围内的散射辐射的各种波长; 以及将纳米结构的一组测量图像与所计算的图像的集合进行比较，并确定CS值的最佳近似值。