公开(公告)号：US20150200238A1

公开(公告)日：2015-07-16

申请号：US14573565

申请日：2014-12-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Moo-Soon KO ,  IL-Jeong LEE

IPC: H01L27/32 ,  H01L21/28 ,  H01L21/311 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66757 ,  H01L27/1248 ,  H01L29/78636 ,  H01L29/78666 ,  H01L29/78675

Abstract: A thin film transistor (TFT) includes a substrate, a semiconductor pattern on the substrate, the semiconductor pattern including an active region, and source and drain regions opposite to each other at respective sides of the active region, a first insulating layer on the active region, a gate electrode on the first insulating layer, the gate electrode overlapping the active region, a second insulating layer on a front surface of the substrate having the gate electrode formed thereon, the second insulating layer including contact holes through which portions of the respective source and drain regions are exposed, and source and drain electrodes formed on the second insulating layer, the source and drain electrodes being respectively coupled to the source and drain regions through the contact holes.

Abstract translation: 薄膜晶体管（TFT）包括衬底，衬底上的半导体图案，包括有源区的半导体图案，以及在有源区的各个侧面处彼此相对的源区和漏区，活性区上的第一绝缘层 区域，第一绝缘层上的栅电极，与有源区重叠的栅电极，在其上形成有栅电极的基板的正面上的第二绝缘层，第二绝缘层包括各自的部分的接触孔， 源极和漏极区域被暴露，并且形成在第二绝缘层上的源极和漏极电极，源极和漏极电极通过接触孔分别耦合到源极和漏极区域。