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公开(公告)号：US11011970B2
公开(公告)日：2021-05-18
申请号：US16900336
申请日：2020-06-12
申请人： ROHM CO., LTD.
发明人： Yuta Okawauchi , Yusuke Nakakohara , Ken Nakahara
IPC分类号： H03K17/687 , H02M1/08 , H02M3/158
摘要： A gate drive circuit, which drives a gate of a first transistor, includes a first switch on a high potential side and a second switch on a low potential side connected in series at a second connection node between a high potential end and a low potential end of a series connection structure, constituted of a first voltage source and a second voltage source connected in series at a first connection node; and a third switch and an inductor connected in series between the first connection node and the second connection node. The gate of the first transistor can be electrically connected to the second connection node.
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公开(公告)号：US11095217B2
公开(公告)日：2021-08-17
申请号：US16611815
申请日：2018-05-10
申请人： Rohm Co., Ltd.
发明人： Junichi Kashiwagi , Atsushi Yamaguchi , Yohei Moriyama , Yuta Okawauchi , Yusuke Nakakohara , Ken Nakahara
摘要： A ripple injection circuit equipped with: a capacitor that passes a frequency component of an input voltage or a frequency component of an output voltage and that generates a first ripple voltage having a first ripple component; and an integration circuit that integrates a comparison result signal and that generates a second ripple voltage having a second ripple component. The first ripple component and the second ripple component are added to a feedback voltage.
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公开(公告)号：US12094660B2
公开(公告)日：2024-09-17
申请号：US17905385
申请日：2021-03-03
摘要： A multilayer capacitor includes a laminate having a first side surface and a second side surface, a first side covering portion covering the first side surface, and a second side covering portion covering the second side surface. The laminate includes first conductor layers, second conductor layers, dielectric layers and insulating layers laminated in the z direction. Each first conductor layer is connected to the first side covering portion and spaced apart from the second side covering portion. Each second conductor layer is connected to the second side covering portion and spaced apart from the first side covering portion. The insulating layers have a lower dielectric strength than the dielectric layers. Each dielectric layer is sandwiched between a first conductor layer and a second conductor layer. The insulating layers include one sandwiched between two first conductor layers and one sandwiched between two second conductor layers.
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公开(公告)号：US11764668B2
公开(公告)日：2023-09-19
申请号：US17294112
申请日：2019-11-29
申请人： Rohm Co., Ltd.
IPC分类号： H02M1/42 , H02M3/335 , H02M1/00 , H02M7/162 , H02M7/5395
CPC分类号： H02M1/4258 , H02M1/0025 , H02M1/4233 , H02M3/33584 , H02M7/162 , H02M7/5395 , H02M1/0012
摘要： An apparatus includes a control device configured to serve as a principal controlling agent in an electric power conversion device incorporating a switching circuit configured to be a bidirectional inverter. The control device is configured to subtract, from a reference signal that is determined in accordance with an operation mode of the electric power conversion device, a multiplied signal obtained by multiplying a control-target current of the switching circuit by a prescribed coefficient to generate, based on a result of the subtraction, a control signal for controlling the bidirectional inverter.
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公开(公告)号：US11482918B2
公开(公告)日：2022-10-25
申请号：US16771995
申请日：2018-11-16
申请人： Rohm Co., Ltd.
发明人： Yuta Okawauchi , Yusuke Nakakohara , Ken Nakahara
IPC分类号： H02M3/158 , H02M1/08 , H03K17/0412 , H02M1/00
摘要： A gate drive circuit, which drives a gate of a first transistor, includes a first switch on a high potential side and a second switch on a low potential side connected in series at a second connection node between a high potential end and a low potential end of a series connection structure, constituted of a first voltage source and a second voltage source connected in series at a first connection node; and a third switch and an inductor connected in series between the first connection node and the second connection node. The gate of the first transistor can be electrically connected to the second connection node.
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