公开(公告)号：US20240263348A1

公开(公告)日：2024-08-08

申请号：US18106732

申请日：2023-02-07

申请人： Robert Bosch GmbH

发明人： Bo CHENG ,  Mordechai KORNBLUTH ,  Charles TUFFILE ,  Jens BARINGHAUS ,  Christian HUBER

IPC分类号： C30B25/16 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L23/31

CPC分类号： C30B25/16 ,  C30B25/183 ,  C30B29/406 ,  H01L21/022 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L23/3171 ,  H01L23/3192 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L23/291

摘要： A method of manufacturing a structure for power electronics which includes epitaxially growing a GaN semiconductor layer is provided. The method includes growing buffer layers formed of AlN and AlxGa(1-x)N, wherein 0