Combined Pn junction and bulk photovoltaic device
    1.
    发明授权
    Combined Pn junction and bulk photovoltaic device 有权
    组合Pn结和体光伏器件

    公开(公告)号:US08907205B2

    公开(公告)日:2014-12-09

    申请号:US13162186

    申请日:2011-06-16

    摘要: A solar cell comprising a semiconductor solar cell of a first band gap; a buffer layer formed on a surface of the semiconductor solar cell; and at least one layer of a multiferroic or a ferroelectric material formed on the buffer layer; wherein the at least one layer of a multiferroic or a ferroelectric material has a second bang gap, the first band gap being smaller than the second band gap.

    摘要翻译: 一种太阳能电池,包括具有第一带隙的半导体太阳能电池; 形成在所述半导体太阳能电池的表面上的缓冲层; 以及形成在缓冲层上的至少一层多铁性或铁电材料层; 其中所述多铁性或铁电材料的所述至少一层具有第二凸起间隙,所述第一带隙小于所述第二带隙。