公开(公告)号：US20250046705A1

公开(公告)日：2025-02-06

申请号：US18769072

申请日：2024-07-10

Applicant: Renesas Electronics Corporation

Inventor： Nobuhito SHIRAISHI ,  Yorinobu KUNIMUNE ,  Yoshimi KATO ,  Nozomi ITO ,  Mengnan YANG ,  Kenichiro SONODA

IPC: H01L23/522 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532

Abstract: A semiconductor device includes a first dielectric film, a resistor element disposed on the first dielectric film, and a second dielectric film disposed on the resistor element. The resistor element contains silicon, chromium, and carbon. The silicon concentration in the resistor element increases from a center part of the resistor element towards an upper surface of the resistor element, and also increases from the center part of the resistor element towards a lower surface of the resistor element.