公开(公告)号：US20180352434A1

公开(公告)日：2018-12-06

申请号：US15955831

申请日：2018-04-18

Applicant: Renesas Electronics Corporation

Inventor： Tomohiko OHTSU ,  Shinichi YAMADA ,  Yuichi MARUYAMA ,  Hideyuki WAKADA ,  Yoshihiro HAYASHI ,  Taku FUJIWARA

IPC: H04W12/06 ,  H04L29/06

Abstract: Provided is a technology for a technology for easily inhibiting a wireless signal from being spoofed. A wireless communication system includes a beacon device and an information processing terminal. The beacon device includes a first communication circuit for transmitting a beacon signal to the information processing terminal in accordance with a predetermined transmission interval pattern. The information processing terminal includes a second communication circuit, a first storage device, and a control device. The second communication circuit receives the beacon signal from the beacon device. The first storage device stores the predetermined transmission interval pattern. The control device authenticates the beacon device by comparing a reception interval pattern of the beacon signal received by the second communication circuit with the predetermined transmission interval pattern stored in the first storage device.

公开(公告)号：US20130334562A1

公开(公告)日：2013-12-19

申请号：US13900716

申请日：2013-05-23

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryo NIIDE ,  Shinichi YAMADA ,  Yasuharu ICHINOSE ,  Toshiya NOZAWA

IPC: H01L27/15 ,  H01L33/36

CPC classification number: H01L27/0248 ,  H01L24/32 ,  H01L25/167 ,  H01L27/15 ,  H01L29/866 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/07802 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device simplifies the manufacturing process. The device includes a protective chip which has a surface Zener diode to protect a light emitting chip with an LED formed therein from surge voltage. The protective chip is mounted over a wiring electrically coupled through a metal wire to an anode electrode coupled to a p-type semiconductor region whose conductivity type is the same as that of the semiconductor substrate of the chip. The anode electrode of the protective chip is electrically coupled to the back surface of the chip without PN junction, so even if the back surface is in contact with the wiring, no problem occurs with the electrical characteristics of the Zener diode. This eliminates the need to form an insulating film on the back surface of the chip to prevent contact between the back surface and the wiring, thus simplifying the manufacturing process.

Abstract translation: 半导体器件简化了制造工艺。 该器件包括保护芯片，该保护芯片具有表面齐纳二极管，以保护发光芯片与其中形成的LED的浪涌电压。 保护芯片安装在通过金属线电耦合到与p型半导体区域耦合的阳极的布线上，该p型半导体区域的导电类型与芯片的半导体衬底的导电类型相同。 保护芯片的阳极电极电耦合到芯片的背面而没有PN结，所以即使背面与布线接触，也不会在齐纳二极管的电气特性上出现问题。 这样就不需要在芯片背面形成绝缘膜，以防止背面和布线之间的接触，从而简化了制造工艺。

公开(公告)号：US20150249077A1

公开(公告)日：2015-09-03

申请号：US14714837

申请日：2015-05-18

Applicant: Renesas Electronics Corporation

Inventor： Ryo NIIDE ,  Shinichi YAMADA ,  Yasuharu ICHINOSE ,  Toshiya NOZAWA

IPC: H01L27/02 ,  H01L29/866 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L27/0248 ,  H01L24/32 ,  H01L25/167 ,  H01L27/15 ,  H01L29/866 ,  H01L33/36 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/07802 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device simplifies the manufacturing process. The device includes a protective chip which has a surface Zener diode to protect a light emitting chip with an LED formed therein from surge voltage. The protective chip is mounted over a wiring electrically coupled through a metal wire to an anode electrode coupled to a p-type semiconductor region whose conductivity type is the same as that of the semiconductor substrate of the chip. The anode electrode of the protective chip is electrically coupled to the back surface of the chip without PN junction, so even if the back surface is in contact with the wiring, no problem occurs with the electrical characteristics of the Zener diode. This eliminates the need to form an insulating film on the back surface of the chip to prevent contact between the back surface and the wiring, thus simplifying the manufacturing process.

Abstract translation: 半导体器件简化了制造工艺。 该器件包括保护芯片，该保护芯片具有表面齐纳二极管，以保护发光芯片与其中形成的LED的浪涌电压。 保护芯片安装在通过金属线电耦合到与p型半导体区域耦合的阳极的布线上，该p型半导体区域的导电类型与芯片的半导体衬底的导电类型相同。 保护芯片的阳极电极电耦合到芯片的背面而没有PN结，所以即使背面与布线接触，也不会在齐纳二极管的电气特性上出现问题。 这样就不需要在芯片背面形成绝缘膜，以防止背面和布线之间的接触，从而简化了制造工艺。