Opical coupling circuit including a light-receiving unit provided not to receive optical signal, and signal processing device

    公开(公告)号:US09882537B2

    公开(公告)日:2018-01-30

    申请号:US14698998

    申请日:2015-04-29

    Inventor: Hitoshi Imai

    CPC classification number: H03F3/085 G01J2001/444 H04B10/802 H04B15/005

    Abstract: A light-emitting unit outputs an optical signal corresponding to an input electric signal. A light-receiving unit is electrically insulated from the light-emitting unit and outputs an electric signal according to the received optical signal as an output signal. In the light-receiving unit, a first light-receiving device outputs an optical current according to the optical signal. A second light-receiving device is provided not to receive the optical signal. A current duplication circuit duplicates a current flowing through the second light-receiving device. A current-voltage conversion circuit converts a current, which is generated by subtracting the current duplicated by the current duplication circuit from a current flowing through the first light-receiving device, into a voltage signal. A comparator output a result of a comparison between the voltage signal converted by the current-voltage conversion circuit and a threshold voltage as the output signal.

    SEMICONDUCTOR MEMORY WITH THRESHOLD CURRENT SETTING CIRCUIT
    2.
    发明申请
    SEMICONDUCTOR MEMORY WITH THRESHOLD CURRENT SETTING CIRCUIT 审中-公开
    具有阈值电流设定电路的半导体存储器

    公开(公告)号:US20160134250A1

    公开(公告)日:2016-05-12

    申请号:US15000158

    申请日:2016-01-19

    Abstract: A semiconductor device includes a first trans-impedance amplifier, a second trans-impedance amplifier, a peak hold circuit, a comparator and a threshold current setting circuit. The first trans-impedance amplifier converts a first current signal generated by a first photodiode, into which an optical signal is input, into a first voltage signal. The second trans-impedance amplifier converts a second current signal generated by a second photodiode, to which an optical signal is blocked, into a second voltage signal. The peak hold circuit holds the peak value of the first voltage signal. The comparator outputs a pulse on the basis of the first and second voltage signals. The threshold current setting circuit draws out a threshold current.

    Abstract translation: 半导体器件包括第一跨阻抗放大器,第二跨阻抗放大器,峰值保持电路,比较器和阈值电流设置电路。 第一跨阻抗放大器将由输入光信号的第一光电二极管产生的第一电流信号转换为第一电压信号。 第二跨阻抗放大器将由光信号被阻挡的第二光电二极管产生的第二电流信号转换为第二电压信号。 峰值保持电路保持第一电压信号的峰值。 比较器基于第一和第二电压信号输出脉冲。 阈值电流设定电路抽出阈值电流。

    Semiconductor memory with threshold current setting circuit
    3.
    发明授权
    Semiconductor memory with threshold current setting circuit 有权
    具有阈值电流设定电路的半导体存储器

    公开(公告)号:US09270237B2

    公开(公告)日:2016-02-23

    申请号:US14063747

    申请日:2013-10-25

    Abstract: A semiconductor device includes a first trans-impedance amplifier, a second trans-impedance amplifier, a peak hold circuit, a comparator and a threshold current setting circuit. The first trans-impedance amplifier converts a first current signal generated by a first photodiode, into which an optical signal is input, into a first voltage signal. The second trans-impedance amplifier converts a second current signal generated by a second photodiode, to which an optical signal is blocked, into a second voltage signal. The peak hold circuit holds the peak value of the first voltage signal. The comparator outputs a pulse on the basis of the first and second voltage signals. The threshold current setting circuit draws out a threshold current.

    Abstract translation: 半导体器件包括第一跨阻抗放大器,第二跨阻抗放大器,峰值保持电路,比较器和阈值电流设置电路。 第一跨阻抗放大器将由输入光信号的第一光电二极管产生的第一电流信号转换为第一电压信号。 第二跨阻抗放大器将由光信号被阻挡的第二光电二极管产生的第二电流信号转换为第二电压信号。 峰值保持电路保持第一电压信号的峰值。 比较器基于第一和第二电压信号输出脉冲。 阈值电流设定电路抽出阈值电流。

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