PHOTONIC PRESSURE SENSOR
    2.
    发明申请

    公开(公告)号:US20230112830A1

    公开(公告)日:2023-04-13

    申请号:US17938328

    申请日:2022-10-05

    Inventor: Guomin YU

    Abstract: A sensor. In some embodiments, the sensor includes a first waveguide, a flexible support element, and a second waveguide. A first portion of the first waveguide may be supported by the flexible support element and separated by a first gap from a second portion of the first waveguide. The flexible support element may be capable of bending so as to cause an effective index of refraction of the first waveguide to change. The first waveguide may be coupled to the second waveguide through a second gap, the second gap being at an end of the first waveguide and an end of the second waveguide.

    INTEGRATION OF PHOTONIC COMPONENTS ON SOI PLATFORM

    公开(公告)号:US20210271119A1

    公开(公告)日:2021-09-02

    申请号:US17055114

    申请日:2019-05-14

    Abstract: An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

    SCHOTTKY PHOTODETECTOR
    4.
    发明申请

    公开(公告)号:US20200176627A1

    公开(公告)日:2020-06-04

    申请号:US16641142

    申请日:2018-08-20

    Abstract: An optoelectronic device, and a method of fabricating an optoelectronic device. The device comprising: a rib waveguide formed of doped silicon, said doped waveguide having a ridge portion, containing an uppermost surface and two sidewall surfaces; and a slab portion, adjacent to the two sidewall surfaces. The device further comprises: a metal contact layer, which directly abuts the uppermost surface and two sidewall surfaces, and which extends along a part of the slab portion so as to provide a Schottky barrier between the metal contact layer and the rib waveguide.

    OPTICAL MODULATOR
    5.
    发明申请
    OPTICAL MODULATOR 审中-公开

    公开(公告)号:US20200089076A1

    公开(公告)日:2020-03-19

    申请号:US16496934

    申请日:2018-03-22

    Abstract: A method of operating an optical modulator. The optical modulator having: a rib waveguide which includes a junction which is either a PIN or PN junction, the junction having a breakdown voltage. The method comprising: applying a reverse bias to the junction, so as to operate the optical modulator around the breakdown voltage of the junction; operating the modulator in an avalanche multiplication and/or band-to-band tunnelling mode by increasing the reverse bias past the breakdown voltage.

    SEMICONDUCTOR PHOTODIODE
    9.
    发明申请

    公开(公告)号:US20230019587A1

    公开(公告)日:2023-01-19

    申请号:US17862338

    申请日:2022-07-11

    Abstract: A semiconductor photodiode. The semiconductor photodiode including: an input waveguide, arranged to receive an optical signal at a first port and provide the optical signal from the second port; a photodiode waveguide, arranged to receive the optical signal from the second port of the input waveguide, and at least partially convert the optical signal into an electrical signal; and an electro-static defence component, located adjacent to the photodiode waveguide. The electro-static defence component and the photodiode waveguide are electrically connected in parallel.

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