-
公开(公告)号:US20220392660A1
公开(公告)日:2022-12-08
申请号:US17760684
申请日:2020-09-15
发明人: Rainer LEBERT , Christoph Sebastian PHIESEL , Thomas MISSALLA , Andreas BIERMANNS-FOETH , Christian PIEL
摘要: A microscope system for flexibly, efficiently and quickly inspecting patterns and defects on extreme ultraviolet (EUV) lithography photomasks. The system includes a stand-alone plasma-based EUV radiation source with an emission spectrum with a freestanding line emission in the spectral range from 12.5 nm to 14.5 nm has a relative bandwidth of λ/Δλ>1000, means for the broadband spectral filtering λ/Δλ