公开(公告)号：US20210249314A1

公开(公告)日：2021-08-12

申请号：US17121175

申请日：2020-12-14

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuta MIZUKAMI ,  Tohru KAWAI

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/225 ,  H01L29/49

Abstract: A semiconductor device includes a semiconductor substrate, an insulating layer, a semiconductor layers and a silicide layer. The insulating layer is formed on the semiconductor substrate. The semiconductor layer is formed on the insulating layer and includes a polycrystalline silicon. The silicide layer is formed on the semiconductor layer. The semiconductor layer has a first semiconductor part and a second semiconductor part. The first semiconductor part includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The second semiconductor part is adjacent the second semiconductor region. In a width direction of the first semiconductor part, a second length of the second semiconductor part is greater than a first length of the first semiconductor part. A distance between the first and second semiconductor regions is 100 nm or more in an extension direction in which the first semiconductor region extends.