公开(公告)号：US11282917B2

公开(公告)日：2022-03-22

申请号：US16889725

申请日：2020-06-01

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuhiko Iwakiri ,  Akira Matsumoto

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L49/02 ,  H01L21/67

Abstract: A semiconductor device including a multilayer wiring layer comprising a first wiring, a first insulating film formed on the multilayer wiring layer and having a first opening exposing a portion of the first wiring, a second insulating film formed on the first insulating film and having a second opening continuing with the first opening, and an inductor formed of the first wiring, and a second wiring electrically connected with the first wiring through a via formed in the first opening. A side surface of the via contacts with the first insulating film, and does not contact with the second insulating film.