公开(公告)号：US20180351509A1

公开(公告)日：2018-12-06

申请号：US15928948

申请日：2018-03-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Guoqiang ZHANG ,  Kosuke YAYAMA

IPC: H03B5/04 ,  H03B5/12

CPC classification number: H03B5/04 ,  H03B5/1206 ,  H03B5/1228 ,  H03B5/1231 ,  H03K3/011 ,  H03K3/0231 ,  H03L1/022 ,  H03L7/00

Abstract: A semiconductor device includes a reference voltage generation circuit configured to generate reference voltages Va and Vb capable of adjusting a primary temperature characteristic, and an oscillation circuit configured to output an oscillation signal using the reference voltages Va and Vb, in which the oscillation circuit includes a frequency/current conversion circuit that is driven by the reference voltage Va and outputs a current Ie in accordance with a frequency of a feedback signal, a control voltage generation circuit configured to generate a control voltage in accordance with a potential difference between a voltage in accordance with the current Ie and the reference voltage Vb, a voltage control oscillation circuit configured to output the oscillation signal having a frequency in accordance with the control voltage, and a frequency division circuit configured to divide a frequency of the oscillation signal and output the resulting signal as the feedback signal.