公开(公告)号：US20190304919A1

公开(公告)日：2019-10-03

申请号：US15936964

申请日：2018-03-27

Applicant: QUALCOMM Incorporated

Inventor： John ZHU ,  Da YANG ,  Stanley Seungchul SONG ,  Kern RIM

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/285

Abstract: Aspects of the disclosure are directed to an integrated circuit. The integrated circuit may include a metal contact comprising a first hybrid interconnect structure disposed within a metallization layer, and a metal comprising a second hybrid interconnect structure disposed within the metallization layer, wherein each of the first and the second hybrid interconnect structures has a top portion and a bottom portion, and wherein the top portion of each of the first and the second hybrid interconnect structures comprises a metal element that is suitable for chemical mechanical planarization (CMP) and the bottom portion of each of the first and the second hybrid interconnect structures comprises ruthenium (Ru). The metal element may comprise cobalt (Co).