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1.发明授权Methods and devices for matching transmission line characteristics using stacked metal oxide semiconductor (MOS) transistors 有权使用叠层金属氧化物半导体（MOS）晶体管匹配传输线特性的方法和装置公开(公告)号：US08928365B2
公开(公告)日：2015-01-06
申请号：US13658778
申请日：2012-10-23
Applicant: QUALCOMM Incorporated
Inventor： Miao Li , Jingcheng Zhuang , Yan Hu , Xiaoliang Bai , Jing Kang
IPC: H03K3/00
CPC classification number: H03K19/017554 , H03K19/0005
Abstract: An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
Abstract translation: 用于静电放电（ESD）保护的输出驱动器包括耦合在电源端子和第一差分输出端子之间的第一对堆叠金属氧化物半导体场效应晶体管（MOS）器件。 输出驱动器还包括耦合在第二差分输出端子和接地端子之间的第二对堆叠MOS器件。
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2.发明申请METHODS AND DEVICES FOR MATCHING TRANSMISSION LINE CHARACTERISTICS USING STACKED METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTORS 有权使用堆叠金属氧化物半导体（MOS）晶体管匹配传输线特性的方法和装置公开(公告)号：US20140111250A1
公开(公告)日：2014-04-24
申请号：US13658778
申请日：2012-10-23
Applicant: QUALCOMM INCORPORATED
Inventor： Miao Li , Jingcheng Zhuang , Yan Hu , Xiaoliang Bai , Jing Kang
IPC: H03K3/00
CPC classification number: H03K19/017554 , H03K19/0005
Abstract: An output driver for electrostatic discharge (ESD) protection includes a first pair of stacked metal oxide semiconductor field-effect transistor (MOS) devices coupled between a power terminal and a first differential output terminal. The output driver also includes a second pair of stacked MOS devices coupled between a second differential output terminal and a ground terminal.
Abstract translation: 用于静电放电（ESD）保护的输出驱动器包括耦合在电源端子和第一差分输出端子之间的第一对堆叠金属氧化物半导体场效应晶体管（MOS）器件。 输出驱动器还包括耦合在第二差分输出端子和接地端子之间的第二对堆叠MOS器件。
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