公开(公告)号：US20240088014A1

公开(公告)日：2024-03-14

申请号：US17940911

申请日：2022-09-08

Applicant: QUALCOMM Incorporated

Inventor： Keyurkumar Karsanbhai KANSAGRA ,  Manjanaika CHANDRANAIKA ,  Ankit GUPTA ,  Kamesh MEDISETTI ,  Akhtar ALAM

IPC: H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L23/5221 ,  H01L23/5286

Abstract: In certain aspects, a chip includes first source/drain contacts formed over a first oxide diffusion (OD), and first gates, wherein each of the first gates is disposed between a respective pair of the first source/drain contacts. The chip also includes a first bridge coupling a first one of the first source/drain contacts, a first one of the first gates, and a second one of the first source/drain contacts. The chip also includes a first metal routing coupled to the first one of the first source/drain contacts, and a second metal routing coupled to the second one of the first source/drain contacts.