专利检索 ap:("QILU UNIVERSITY OF TECHNOLOGY") AND inv:"Jing REN" 第 1 页

1.

发明申请
BISMUTH TUNGSTATE/BISMUTH SULFIDE/MOLYBDENUM DISULFIDE HETEROJUNCTION TERNARY COMPOSITE MATERIAL AND PREPARATION METHOD AND APPLICATION THEREOF 有权

公开(公告)号：US20220315492A1

公开(公告)日：2022-10-06

申请号：US17298677

申请日：2020-08-17

申请人： QILU UNIVERSITY OF TECHNOLOGY

发明人： Guowei ZHOU , Jing REN , Qinghua GONG , Bin SUN , Tingting GAO , Xuefeng SUN

IPC分类号： C04B35/495 , C04B35/547 , C04B35/626

摘要： The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi2WO6 is an orthorhombic system, Bi2S3 is a p-type semiconductor located on a (130) crystal face, MoS2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 μm. The spherical Bi2WO6/Bi2S3/MoS2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.