公开(公告)号：US20210134737A1

公开(公告)日：2021-05-06

申请号：US16840823

申请日：2020-04-06

申请人： PlayNitride Display Co., Ltd.

发明人： Hsin-Chiao FANG ,  Shen-Jie WANG ,  Yen-Lin LAI

IPC分类号： H01L23/00 ,  H01L21/02

摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.

公开(公告)号：US20210135051A1

公开(公告)日：2021-05-06

申请号：US16868883

申请日：2020-05-07

申请人： PlayNitride Display Co., Ltd.

发明人： Hsin-Chiao FANG ,  Shen-Jie WANG ,  Yen-Lin LAI

IPC分类号： H01L33/12 ,  H01L33/32

摘要： The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.

公开(公告)号：US20220406961A1

公开(公告)日：2022-12-22

申请号：US17516004

申请日：2021-11-01

申请人： PlayNitride Display Co., Ltd.

发明人： Shen-Jie WANG ,  Yu-Yun LO ,  Yen-Lin LAI ,  Tzu-Yang LIN

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/24 ,  H01L33/42 ,  H01L33/44

摘要： A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 108/cm2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.