公开(公告)号：US20040208994A1

公开(公告)日：2004-10-21

申请号：US10642426

申请日：2003-08-15

申请人： Planar Systems, Inc.

发明人： Kari Harkonen ,  Mark Doczy ,  Teemu Lang ,  Nathan E. Baxter

IPC分类号： B32B009/00

CPC分类号： C23C16/32 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/4554 ,  Y10T428/12625

摘要： A process and system for depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.

摘要翻译： 将含碳和过渡金属的薄膜沉积在衬底上的工艺和系统包括将衬底放置在反应空间内，并顺序地将过渡金属化学物质和有机金属化学物质脉冲入反应空间。 在每个化学脉冲之后，清除反应空间，重复脉冲和吹扫顺序，直到获得所需的膜厚度。 优选的沉积工艺使用原子层沉积技术，并且可以导致在大的衬底区域上具有均匀厚度的导电薄膜碳化物膜和优异的粘附性和阶梯覆盖性。