公开(公告)号：US08638440B1

公开(公告)日：2014-01-28

申请号：US13927223

申请日：2013-06-26

Applicant: Paul R. Ohodnicki, Jr. ,  Congjun Wang ,  Mark A. Andio

Inventor： Paul R. Ohodnicki, Jr. ,  Congjun Wang ,  Mark A. Andio

IPC: G01N21/00 ,  G01N21/55

CPC classification number: G01N21/783 ,  G01N2201/0826

Abstract: The disclosure relates to a method of detecting a change in a chemical composition by contacting a doped oxide material with a monitored stream, illuminating the doped oxide material with incident light, collecting exiting light, monitoring an optical signal based on a comparison of the incident light and the exiting light, and detecting a shift in the optical signal. The doped metal oxide has a carrier concentration of at least 1018/cm3, a bandgap of at least 2 eV, and an electronic conductivity of at least 101 S/cm, where parameters are specified at a temperature of 25° C. The optical response of the doped oxide materials results from the high carrier concentration of the doped metal oxide, and the resulting impact of changing gas atmospheres on that relatively high carrier concentration. These changes in effective carrier densities of conducting metal oxide nanoparticles are postulated to be responsible for the change in measured optical absorption associated with free carriers. Exemplary doped metal oxides include but are not limited to Al-doped ZnO, Sn-doped In2O3, Nb-doped TiO2, and F-doped SnO2.

Abstract translation: 本公开涉及通过使掺杂的氧化物材料与监测的流接触来检测化学组成的变化的方法，用入射光照射掺杂的氧化物材料，收集离开的光，基于入射光的比较监测光学信号 和出射光，并检测光信号的偏移。 掺杂的金属氧化物具有至少1018 / cm3的载流子浓度，至少2eV的带隙和至少101S / cm的电子导电率，其中在25℃的温度下规定了参数。光学响应 掺杂的氧化物材料由掺杂的金属氧化物的高载流子浓度导致，并且由此改变气体气氛对所述相对高的载流子浓度的影响。 假设导电金属氧化物纳米颗粒的有效载流子密度的这些变化是造成与自由载体相关的测量的光吸收的变化的原因。 示例性的掺杂金属氧化物包括但不限于掺杂Al的ZnO，掺杂Sn的In 2 O 3，掺杂Nb的TiO 2和F掺杂的SnO 2。