公开(公告)号：US20150349146A1

公开(公告)日：2015-12-03

申请号：US14724992

申请日：2015-05-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshinari ICHIHASHI ,  Motohide KAI

IPC: H01L31/0216 ,  H01L31/075

CPC classification number: H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  H01L31/075 ,  Y02E10/50

Abstract: A semiconductor substrate of any one of a first conductivity type and a second conductivity type includes a first main surface and a second main surface. A first semiconductor layer of the first conductivity type is provided on the first main surface. A second semiconductor layer of the second conductivity type is provided on the first main surface. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer. An insulating layer comprises silicon nitride and is arranged between the first semiconductor layer and the second semiconductor layer in an overlap region where the second semiconductor layer is provided above the first semiconductor layer. An anti-diffusion film is arranged between the insulating layer and the first semiconductor layer and is configured to prevent nitrogen from diffusing from the insulating layer into the first semiconductor layer.

Abstract translation: 第一导电类型和第二导电类型中的任一种的半导体衬底包括第一主表面和第二主表面。 第一导电类型的第一半导体层设置在第一主表面上。 第二导电类型的第二半导体层设置在第一主表面上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。 绝缘层包括氮化硅，并且在第一半导体层设置在第一半导体层之上的重叠区域中布置在第一半导体层和第二半导体层之间。 在绝缘层和第一半导体层之间设置防扩散膜，并且防止氮从绝缘层扩散到第一半导体层中。