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公开(公告)号:US12074516B2
公开(公告)日:2024-08-27
申请号:US17758404
申请日:2020-12-17
Inventor: Hiroki Akashi , Takuya Ishii , Yoshihito Kawakami , Kazuhiro Yahata , Takeshi Azuma , Yoshihisa Minami
Abstract: A switch circuit is configured of a first semiconductor element and a second semiconductor element connected in series, and receives a DC voltage of 100 V or more. The drive circuit causes the first semiconductor element or the second semiconductor element to perform a switching operation. The isolated power supply circuit converts a predetermined power supply voltage into an isolated first power supply voltage, and outputs the first power supply voltage to the drive circuit. The isolation signal converter converts a first signal of 6 MHz or more into an isolated first drive signal, and outputs the first drive signal to the drive circuit. The single substrate mounts the isolated power supply circuit and the isolation signal converter. Both the first semiconductor element and the second semiconductor element are wide bandgap semiconductor elements.
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公开(公告)号:US11031935B2
公开(公告)日:2021-06-08
申请号:US17003900
申请日:2020-08-26
Inventor: Daijiro Arisawa , Takeshi Azuma , Daisuke Yamamoto , Yoshihisa Minami , Manabu Yanagihara
IPC: H03K3/00 , H03K3/017 , H03K17/06 , H03K17/14 , H03K17/16 , H03K17/687 , H02M1/08 , H02M1/34 , H03K17/74
Abstract: A switching circuit includes; a switching element; a driver; a diode connected between a source terminal and a gate terminal of the switching element; a resistor connected between the driver and the gate terminal of the switching element; a series circuit connected in parallel with the resistor, and including a capacitor and a resistor; and a diode including an anode on a side of the gate terminal of the switching element and a cathode on a side of a second output terminal of the driver. The diode is connected in parallel with at least the capacitor out of the capacitor and the resistor connected in series.
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公开(公告)号:US20210258008A1
公开(公告)日:2021-08-19
申请号:US17308805
申请日:2021-05-05
Inventor: Daijiro Arisawa , Takeshi Azuma , Daisuke Yamamoto , Yoshihisa Minami , Manabu Yanagihara
IPC: H03K17/687 , H02M1/08 , H02M1/34 , H03K17/74
Abstract: A switching circuit includes: a normally-off junction field-effect GaN transistor including source, drain, and gate terminals; a drive device of one output type electrically connected to the gate terminal; a first rectifier, between the source terminal and the gate terminal, including an anode on a source terminal side and a cathode on a gate terminal side; a capacitor between a cathode side of the first rectifier and the drive device; a first resistor between the capacitor and the drive device; a second resistor, one side of the second resistor being connected to the drive device, another side of the second resistor being connected between the cathode side of the first rectifier and the capacitor; and a second rectifier including an anode on a capacitor side and a cathode on a drive device side. No resistor is provided between the cathode side of the second rectifier and the drive device.
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