公开(公告)号：US20160090304A1

公开(公告)日：2016-03-31

申请号：US14847176

申请日：2015-09-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUSUKE MORI ,  MAMORU IMADE ,  TOMIO YAMASHITA ,  RYO KUWABARA ,  YOSHIO OKAYAMA

IPC: C01B21/06 ,  B01J19/24

CPC classification number: C01B21/0632

Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

Abstract translation: 用于制造其中含氮元素气体的热分解被抑制以提高生产率的III族氮化物的方法和装置。 制备III族氮化物晶体的方法，包括：在加热的气氛下使III族元素的氧化物或金属反应以形成III族元素的化合物气体; 以比化合气低的温度混合含氮元素的气体; 并使含氮元素的气体与复合气体反应，形成III族氮化物晶体。

公开(公告)号：US20160090665A1

公开(公告)日：2016-03-31

申请号：US14847188

申请日：2015-09-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIO OKAYAMA ,  RYO KUWABARA ,  TOMIO YAMASHITA ,  YUSUKE MORI ,  MAMORU IMADE

IPC: C30B25/10 ,  C30B29/40 ,  C30B25/14 ,  C30B25/12 ,  C01B21/06 ,  C30B25/08

CPC classification number: C30B25/10 ,  C01B21/0632 ,  C30B25/12 ,  C30B25/14 ,  C30B29/406

Abstract: Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater.

Abstract translation: 提供用于制造III族氮化物晶体的装置和方法。 用于制造III族氮化物晶体的装置包括：室; 含氮元素的气体供给口，用于向所述室供给含氮元素的气体; 用于将第III族元素的复合气体供给到室中的复合气体供给口，以使复合气体与含氮元素的气体混合; 用于将混合气体和这样混合的含氮元素的气体排出的排出口在室外; 用于将种子基板保持在所述复合气体和所述含氮元素气体的混合点的下游侧的位置并且位于所述排出口的上游侧的保持器; 用于加热种子基底的第一加热器; 以及第二加热器，用于将混合点和种子基底之间的空间加热至高于由第一加热器加热的温度的温度。