公开(公告)号：US20150146756A1

公开(公告)日：2015-05-28

申请号：US14579593

申请日：2014-12-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masao KAWAGUCHI ,  Hideki KASUGAI ,  Shinichiro NOZAKI

IPC: H01S5/34 ,  H01S5/343

CPC classification number: H01S5/3425 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/32 ,  H01S5/022 ,  H01S5/18305 ,  H01S5/18361 ,  H01S5/2031 ,  H01S5/3216 ,  H01S5/34333

Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm−3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.

Abstract translation: 半导体发光元件包括n型导光层，其包含III族氮化物半导体，有源层和p型导光层，其中n型导光层包括半导体超晶格层，其为 堆叠的超晶格层，半导体超晶格层具有其中III族氮化物半导体A和III族氮化物半导体B交替堆叠的结构，每个半晶体A和每个半导体B堆叠在每个超晶格层中， 关系式Eg（A）> Eg（B）成立，半导体A是含有AlInN的膜，该膜含有氧浓度为1×10 18 cm -3以上的氧（O），半导体A的膜厚为 至多5nm，并且在超晶格层的层叠方向上注入电流。

公开(公告)号：US20210028598A1

公开(公告)日：2021-01-28

申请号：US16319696

申请日：2017-08-23

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Masao KAWAGUCHI ,  Shinichi TAKIGAWA ,  Nozomi NAKA

IPC: H01S5/042 ,  H01S5/22

Abstract: A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.