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公开(公告)号:US20210366992A1
公开(公告)日:2021-11-25
申请号:US17394091
申请日:2021-08-04
Inventor: Shunsuke ISONO , Hidenari KANEHARA , Sanshiro SHISHIDO , Takeyoshi TOKUHARA
IPC: H01L27/30 , H04N5/374 , H04N5/376 , H01L27/146
Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.
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公开(公告)号:US20210273012A1
公开(公告)日:2021-09-02
申请号:US17324622
申请日:2021-05-19
Inventor: Hidenari KANEHARA , Yusuke OKADA , Sanshiro SHISHIDO , Kazuko NISHIMURA
IPC: H01L27/146
Abstract: An imaging device including: a first pixel and a second pixel that are arranged along a first direction, the first pixel and the second pixel each including a photoelectric converter that converts light into a charge, a charge accumulator that accumulates the charge, and a first transistor one of a source and a drain of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; first voltage supply circuitry that is connected to the first transistor of the first pixel through the first line; and second voltage supply circuitry that is connected to the first transistor of the second pixel through the second line.
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公开(公告)号:US20190098244A1
公开(公告)日:2019-03-28
申请号:US16203166
申请日:2018-11-28
Inventor: Hidenari KANEHARA , Yasuo MIYAKE , Sanshiro SHISHIDO
IPC: H04N5/3745 , H01L27/146 , H04N5/378
CPC classification number: H04N5/3745 , H01L27/14603 , H01L27/14634 , H04N5/3741 , H04N5/376 , H04N5/378
Abstract: An imaging device having pixels in a row which include: first pixel including a first photoelectric converter and a first transistor having a first control terminal; second pixel including a second photoelectric converter and a second transistor having a second control terminal; third pixel including a third photoelectric converter and a third transistor having a third control terminal; and fourth pixel including a fourth photoelectric converter and a fourth transistor having a fourth control terminal. The device further including input signal line, a signal for controlling the first to fourth transistors input to the signal line; first buffer circuit having a first input terminal coupled to the signal line, and a first output terminal coupled to the first and second control terminals; and second buffer circuit having a second input terminal coupled to the signal line and a second output terminal coupled to the second and third control terminals.
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公开(公告)号:US20210043688A1
公开(公告)日:2021-02-11
申请号:US17078440
申请日:2020-10-23
Inventor: Shunsuke ISONO , Hidenari KANEHARA , Sanshiro SHISHIDO , Takeyoshi TOKUHARA
IPC: H01L27/30 , H04N5/374 , H04N5/376 , H01L27/146
Abstract: An imaging device including a semiconductor substrate including a pixel region and a peripheral region; an insulating layer covering the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer covering the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry electrically connected to the first electrodes; peripheral circuitry electrically connected to the detection circuitry, and; and a third electrode located on the insulating layer. The second electrode includes a connection region in which the second electrode is connected to third electrode, the connection region overlaps analog circuitry in a plan view, and in any cross-sections perpendicular to a surface of the semiconductor substrate and parallel to a column or row direction and that intersects at least one of the first electrodes, the digital circuitry includes no transistor that is located directly below the connection region.
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公开(公告)号:US20180124339A1
公开(公告)日:2018-05-03
申请号:US15852874
申请日:2017-12-22
Inventor: Takayoshi YAMADA , Masashi MURAKAMI , Kazuko NISHIMURA , Hidenari KANEHARA , Yasuo MIYAKE
IPC: H04N5/355 , H04N5/357 , H01L27/146 , H04N5/369 , H04N5/232
CPC classification number: H04N5/35563 , H01L27/14603 , H04N5/23245 , H04N5/357 , H04N5/3696 , H04N5/3698
Abstract: An imaging device which includes a counter electrode, a first pixel electrode facing the counter electrode, a second pixel electrode facing the counter electrode, a photoelectric conversion layer sandwiched between the first pixel electrode and the second pixel electrode, and the counter electrode, a first signal detection circuit electrically connected to the second pixel electrode, and a first switching element connected between the first pixel electrode and the first signal detection circuit.
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