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公开(公告)号：US20240203473A1
公开(公告)日：2024-06-20
申请号：US18522109
申请日：2023-11-28
Inventor： Yoonyoung CHUNG , Suwon SEONG , Seongmin PARK
IPC: G11C11/405 , G06N3/065 , G11C11/4096 , G11C11/54 , H10B12/00
CPC classification number: G11C11/405 , G06N3/065 , G11C11/4096 , G11C11/54 , H10B12/00
Abstract: A synapse device may include an oxide semiconductor transistor divided into a write transistor and a read transistor. The write transistor is an oxide semiconductor transistor having a dual gate including a bottom gate located below a thin oxide semiconductor layer and a top gate located above the thin oxide semiconductor layer.
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