公开(公告)号：US20230274985A1

公开(公告)日：2023-08-31

申请号：US17983319

申请日：2022-11-08

Applicant: POSTECH Research and Business Development Foundation

Inventor： Rock Hyun BAEK ,  Hyeok YUN

IPC: H01L21/66 ,  G06N3/08

CPC classification number: H01L22/14 ,  G06N3/08 ,  H01L22/12 ,  H01L22/20

Abstract: Disclosed are a method and apparatus for setting a semiconductor parameter. The method for setting a semiconductor parameter according to an embodiment of the present disclosure is a method performed on a computing apparatus including one or more processors and a memory storing one or more programs executed by the one or more processors, the method including acquiring electrical measurement parameters corresponding to preset semiconductor manufacturing parameters, classifying the electrical measurement parameters into a plurality of groups according to a degree of correlation, extracting a correlation axis reflecting a correlation between electrical measurement parameters belonging to a corresponding group for each classified group, and predicting a figure of merit of a semiconductor device by using data values of electrical measurement parameters belonging to the corresponding group as input based on the correlation axis of each group.

公开(公告)号：US20220277189A1

公开(公告)日：2022-09-01

申请号：US17551450

申请日：2021-12-15

Applicant: RESEARCH COOPERATION FOUNDATION OF YEUNGNAM UNIVERSITY ,  POSTECH Research and Business Development Foundation

Inventor： Hyun Chul CHOI ,  Rock Hyun BAEK ,  Jun Sik YOON ,  Hyeok YUN

IPC: G06N3/063 ,  G06N3/08 ,  G06N3/04 ,  G03F7/20

Abstract: A method for setting of a semiconductor manufacturing parameter according to an embodiment is a method performed in a computing device including one or more processors, and a memory for storing one or more programs executed by the one or more processors, the method including an operation of inputting manufacturing parameters for manufacturing a semiconductor to a neural network model and an operation of training the neural network model to predict at least one of power and delay of the semiconductor based on the input manufacturing parameters.