公开(公告)号：US20240030888A1

公开(公告)日：2024-01-25

申请号：US18254131

申请日：2021-11-17

Applicant: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION

Inventor： Byoung Don KONG ,  Seok Hyun YOON ,  Hyeon Su CHO ,  Seung Ho LEE ,  Gyeong Min SEO ,  Chang Ki BAEK

IPC: H03H9/02 ,  H03H9/64 ,  H03H9/72

CPC classification number: H03H9/02574 ,  H03H9/64 ,  H03H9/72

Abstract: There is provided a substrate for a surface acoustic wave device, comprising a 2-dimensional (2D) crystalline hexagonal boron nitride layer, wherein a surface acoustic wave of the surface acoustic wave device is transmitted through the 2D crystalline hexagonal boron nitride layer.