MEMORY CONTROL METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT

    公开(公告)号:US20210397375A1

    公开(公告)日:2021-12-23

    申请号:US16988731

    申请日:2020-08-10

    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: collecting valid data from a source unit; copying a first logical to physical mapping table corresponding to the source unit to generate a second logical to physical mapping table; updating the second logical to physical mapping table according to a physical address of a recycling unit expected to be written, and the second logical to physical mapping table is recorded with mapping information corresponding to the recycling unit; copying the valid data from the source unit into the recycling unit; and updating first management information according to the second logical to physical mapping table.

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