公开(公告)号：US20250013595A1

公开(公告)日：2025-01-09

申请号：US18450411

申请日：2023-08-16

Applicant: PHISON ELECTRONICS CORP.

Inventor： Yuwei Kuo ,  Yun-You Lin ,  Jhen-Ting Li ,  Christopher Ramseyer

IPC: G06F13/42 ,  G06F13/38

Abstract: A device control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: obtaining device status information of the memory storage device, and the device status information includes at least one of temperature information and power consumption information; and adjusting a connection interface standard adopted by a connection interface unit of the memory storage device from a first connection interface standard to a second connection interface standard according to the device status information, and the first connection interface standard is different from the second connection interface standard.