公开(公告)号：US20200341676A1

公开(公告)日：2020-10-29

申请号：US16425942

申请日：2019-05-29

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chieh Yang ,  Yi-Hsuan Lin ,  Tai-Yuan Huang ,  Ping-Chuan Lin

IPC: G06F3/06

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a first write command from a host system; selecting a first physical erasing unit from at least one physical erasing unit available for writing and writing data corresponding to the first write command to the first physical erasing unit by using a single page programming mode or a multi-page programming mode when the number of physical erasing units available for writing is greater than a first threshold; and selecting a second physical erasing unit from the at least one physical erasing unit available for writing and writing data corresponding to the first write command into the second physical erasing unit by only using the single page programming mode when the number of physical erasing units available for writing is not greater than the first threshold;

公开(公告)号：US11467758B2

公开(公告)日：2022-10-11

申请号：US16425942

申请日：2019-05-29

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chieh Yang ,  Yi-Hsuan Lin ,  Tai-Yuan Huang ,  Ping-Chuan Lin

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/02

Abstract: A data writing method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a first write command from a host system; selecting a first physical erasing unit from at least one physical erasing unit available for writing and writing data corresponding to the first write command to the first physical erasing unit by using a single page programming mode or a multi-page programming mode when the number of physical erasing units available for writing is greater than a first threshold; and selecting a second physical erasing unit from the at least one physical erasing unit available for writing and writing data corresponding to the first write command into the second physical erasing unit by only using the single page programming mode when the number of physical erasing units available for writing is not greater than the first threshold.